THIN-FILM FIELD EFFECT TRANSISTOR, AND DISPLAY USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a TFT which has its high field-effect mobility, high ON/OFF ratio, and improved environment-temperature dependence, and to provide a display that uses the TFT. SOLUTION: A thin-film field effect transistor has at least a gate electrode, a gate electrode insulating film, an active layer containing an amorphous oxide semiconductor, a source electrode, and a drain electrode on a substrate. The carrier density of the active layer is not lower than 3×1015/cm3and not higher than 3×1018/cm3. The thin-film field effect transistor has a resistance layer between its active layer and its source electrode or between its active layer and its drain electrode. Furthermore, the electrical resistivity of its resistance layer is set to be not smaller than 105Ωcm and is not larger than 1013Ωcm, and the thickness of its resistance layer is set to be smaller than 20 nm. COPYRIGHT: (C)2009,JPO&INPIT