| 摘要 |
In order to provide an ESD protection circuit having high immunity to ESD destruction without increasing a chip area of a semiconductor device, a diode-type ESD protection circuit formed of a junction between a first conductivity type diffusion layer and a second conductivity type diffusion layer is formed in an entire peripheral region or a part of the peripheral region outside of internal circuits and bonding pads of the chip, and a diffusion layer formed to fix a substrate potential of the chip and electrically connected to a power source or a ground provided in the peripheral region of the chip is used for any one of the first conductivity type diffusion layer and the second conductivity type diffusion layer, permitting enlargement of the size of the ESD protection circuit without increasing a chip area, and enhancement of immunity to ESD destruction of the semiconductor device.
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