发明名称 |
FINFET WITH SEPARATE GATES AND METHOD FOR FABRICATING A FINFET WITH SEPARATE GATES |
摘要 |
<p>The present invention relates to a FinFET with separate gates and to a method for fabricating the same. A dielectric gate-separation layer between first and second gate electrodes has an extension in a direction pointing from a first to a second gate layer that is smaller than a lateral extension of the fin between its opposite lateral faces. This structure corresponds with a processing method that starts from a covered basic FinFET structure with a continuous first gate layer, and proceeds to remove parts of the first gate layer and of a first gate-isolation layer through a contact opening to the gate layer. Subsequently, a replacement gate-isolation layer that at the same time forms the gate separation layer fabricated, followed by filling the tunnel with a replacement gate layer and a metal filling.</p> |
申请公布号 |
WO2009101564(A1) |
申请公布日期 |
2009.08.20 |
申请号 |
WO2009IB50506 |
申请日期 |
2009.02.09 |
申请人 |
NXP B.V.;SONSKY, JAN;SURDEANU, RADU |
发明人 |
SONSKY, JAN;SURDEANU, RADU |
分类号 |
H01L21/336;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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