| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of forming a resist pattern excellent in dimensional stability without damage. <P>SOLUTION: The pattern forming method includes a step of forming a negative resist film 13 by applying a chemically sensitive negative resist on a substrate 10 for forming a through-hole 11, a step of selectively exposing the resist film, a step of forming a stacked film comprising a negative resist film 13 and a positive resist film 14 by applying a chemically sensitive positive resist over the exposed negative resist film, a step of selectively exposing the positive resist film, and a step of exposing to form a pattern comprising a negative film exposed portion 13a and an positive resist film non-exposed portion 14a. <P>COPYRIGHT: (C)2009,JPO&INPIT |
