| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a SOI (Silicon On Insulator) wafer of high crystal quality, which has less residual crystal defects in a thin-film SOI layer even when the thin-film SOI layer whose film thickness is controlled with high precision is formed by carrying out polishing after forming a semiconductor film by epitaxial growth on insulating films having an opening and a step on a semiconductor substrate. SOLUTION: The first and second insulating films 2 and 3 having the step are formed on the semiconductor substrate 1, and the epitaxial layer 5a is grown in a second opening 5b of the insulating films 2 and 3 and has its epitaxial film thickness controlled to≤3μm when the epitaxial layer 5a extends laterally from the second opening 5a and is grown to cover the second insulating film 3. Then the epitaxial layer 5a is polished by a CMP (Chemical Mechanical Polisher) polishing by using the first insulating film 2 as a stopper to obtain the SOI wafer having the SOI layer controlled to the same thickness as the thickness of the step between the first and second insulating films 2 and 3. COPYRIGHT: (C)2009,JPO&INPIT
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