METHOD AND SYSTEM FOR CREATING SELF-ALIGNED TWIN WELLS WITH CO-PLANAR SURFACES IN A SEMICONDUCTOR DEVICE

摘要

A method and system for providing a twin well in a semiconductor device is described. The method and system include providing at least one interference layer and providing a first mask that covers a first portion of the semiconductor device and uncovers a second portion of the semiconductor device. The first and second portions of the semiconductor device are adjacent. The method and system also include implanting a first well in the second portion of the semiconductor device after the first mask is provided. The method and system also include providing a second mask. The interference layer(s) are configured such that energy during a blanket exposure develops the second mask that uncovers the first portion and covers the second portion of the semiconductor device. The method and system also include implanting a second well in the first portion of the semiconductor device after the second mask is provided.