发明名称 ZWEIPHASIGE ANGEORDNETE DIELEKTRISCHE SCHICHT, UND EINE HALBLEITERANORDNUNG DIE DIESE ENTHÄLT
摘要 <p>A porous, low-k dielectric film that has good mechanical properties as well as a method of fabricating the film and the use of the film as a dielectric layer between metal wiring features are provided. The porous, low-k dielectric film includes a first phase of monodispersed pores having a diameter of from about 1 to about 10 nm that are substantially uniformly spaced apart and are essentially located on sites of a three-dimensional periodic lattice; and a second phase which is solid surrounding the first phase. Specifically, the second phase of the film includes (i) an ordered element that is composed of nanoparticles having a diameter of from about 1 to about 10 nm that are substantially uniformly spaced apart and are essentially arranged on sites of a three-dimensional periodic lattice, and (ii) a disordered element comprised of a dielectric material having a dielectric constant of about 2.8 or less.</p>
申请公布号 DE60232871(D1) 申请公布日期 2009.08.20
申请号 DE2002632871 申请日期 2002.04.30
申请人 INTERNATIONAL BUSINESS MACHINES CORP. 发明人 GATES, STEPHEN MCCONNELL;MURRAY, CHRISTOPHER B.;NITTA, SATYANARAYANA V.;PURUSHOTHAMAN, SAMPATH
分类号 H01L21/316;H01L21/312;H01L21/768;H01L23/522;H01L23/532 主分类号 H01L21/316
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