APPARATUS AND METHOD FOR PLASMA TREATMENT

摘要

A plasma processing apparatus and a plasma processing method are provided to improve a plasma processing state of a substrate by optimizing a supply method of a cooling gas and an apply method of a voltage applied to an electrode pattern of an electrostatic chuck. A power source is applied to an electrostatic chuck(60) in which a substrate(S) is loaded. A cooling gas is supplied between the substrate and the electrostatic chuck. Plasma is formed inside a process chamber(10). In case a supply amount of the cooling gas exceeds a predetermined value, a plasma process is stopped. In case a value detected in a voltage sensor(50) deviates from an error tolerance of the predetermined value, the plasma process is stopped. A set value of a supply amount of the cooling gas is 10sccm.