FIELD-EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING FIELD-EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a high-breakdown-voltage FET and a method for manufacturing the FET.

SOLUTION: FET which has MOS structure and is composed of a nitride-based compound semiconductor includes: a substrate; a semiconductor operation layer which is formed on the substrate and has a recess portion; an insulating film formed on the semiconductor operation layer having the recess portion; a gate electrode formed on the insulating film in the recess portion; and a source electrode and a drain electrode which are formed such that the recess portion is interposed between them and which are electrically connected to the semiconductor operation layer. The recess portion has side wall which extends while it tilting against the semiconductor operation layer.

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