METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE OR PHOTOMASK

摘要

A method for manufacturing a semiconductor device or a photomask by exposing a pattern while scanning a plurality of deflection regions determined depending on a deflection width of an exposure device on an exposure target with electron beams, enables a computer to execute a step of extracting a first pattern that exists near the boundary of the deflection region and in a first deflection region, a step of searching a second pattern that is adjacent to the first pattern and in a second deflection region different from the first deflection region, and a step of performing data processing of exposure data in accordance with a width of the first pattern so as to minimize the change in distance between the extracted first pattern and the searched second pattern due to positional deviation of the deflection region.