SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

Provided is an SGT manufacturing method by which a structure for reducing resistances of a source, a drain and a gate, and desired gate length, source and drain shapes and diameter of a columnar semiconductor are obtained. The method includes a step of forming the columnar semiconductor layer of a first conductivity type; a step of forming a semiconductor layer of a second conductivity type below the columnar semiconductor layer of the first conductivity type; a step of forming a dummy gate insulating film and a dummy gate electrode at the periphery of the columnar semiconductor layer of the first conductivity type; a step of forming a first insulating film above the gate, on the upper side wall of the columnar semiconductor layer of the first conductivity type, with a gate insulating film therebetween; a step of forming a first insulating film on a side wall of the gate; a step of forming a semiconductor layer of the second conductivity type above the columnar semiconductor layer of the first conductivity type; a step of forming a compound composed of a metal and a semiconductor on the semiconductor layer of the second conductivity type and the gate, which are formed above and below the columnar semiconductor layer of the first conductivity type; and a step of forming a gate insulating film and a metal gate electrode by removing the dummy gate insulating film and the dummy gate electrode.