发明名称 Semiconductor device
摘要 <p>Provided is a semiconductor device that can reduce the resistance in a horizontal direction of a substrate (10). A current path (CP2) in a horizontal direction of a substrate (10) is formed in a direction along a short side of the substrate (chip). For example, adopted is a layout in which an element region on an input terminal side (17) and a current extraction region on an output terminal side (18) are aligned along the short side of the chip (10). Furthermore, a first bump electrode (27) and a second bump electrode (28), which are respectively connected to the input terminal (17) and the output terminal (18), are arranged along the short side of the chip (10). Thus, the current path (CP2) in the substrate in the horizontal direction in the substrate (10) is formed to have a wide width and a short length. Accordingly, the resistance of the substrate (10) in the horizontal direction is reduced.</p>
申请公布号 EP1916716(A3) 申请公布日期 2009.08.19
申请号 EP20070021118 申请日期 2007.10.29
申请人 SANYO ELECTRIC CO., LTD.;SANYO SEMICONDUCTOR CO., LTD. 发明人 TETSUYA, YOSHIDA
分类号 H01L29/78;H01L27/02;H01L27/088 主分类号 H01L29/78
代理机构 代理人
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