| 摘要 |
<p>The module has an interlayer (5) consisting of doped semiconductor, that is formed between a silver layer (7) of back electrode layer (4), and a semiconductor layer (3). A copper layer (6) is provided between the silver layer and interlayer. The thickness of the silver layer, copper layer and interlayer are 50-500nm, 1-50nm and 10-300nm respectively. An independent claim is also included for method for producing photovoltaic module.</p> |
