| 发明名称 |
CONDUCTIVE FILM FORMING METHOD, THIN FILM TRANSISTOR, PANEL WITH THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR MANUFACTURING METHOD |
| 摘要 |
<p>An electroconductive film having high adhesion and a low resistivity is formed. An electroconductive film 25 composed mainly of copper and containing an addition metal such as Ti is formed by sputtering a target composed mainly of copper in a vacuum atmosphere into which a nitriding gas is introduced. Such an electroconductive film 25 has high adhesion to a silicon layer 23 and a substrate 22, and is hardly peeled from the substrate 22. Further, since the electroconductive film has a low resistivity and a low contact resistance to a transparent electroconductive film, the electric characteristics do not degrade even when it is used as an electrode film. The electroconductive film formed by the present invention is suitable particularly as a barrier film for an electrode of a TFT or a semiconductor element.</p> |
| 申请公布号 |
EP2091072(A1) |
申请公布日期 |
2009.08.19 |
| 申请号 |
EP20070829652 |
申请日期 |
2007.10.12 |
| 申请人 |
ULVAC, INC. |
发明人 |
TAKASAWA, SATORU;TAKEI, MASAKI;TAKAHASHI, HIROHISA;UKISHIMA, SADAYUKI;TANI, NORIAKI;ISHIBASHI, SATORU |
| 分类号 |
H01L21/285;C23C14/00;C23C14/18;G02F1/1343;G02F1/1362;G02F1/1368;G09F9/00;H01L21/28;H01L21/3205;H01L21/336;H01L21/768;H01L23/52;H01L23/532;H01L27/12;H01L29/45;H01L29/49;H01L29/786 |
主分类号 |
H01L21/285 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
