发明名称 CIRCUIT FOR CONTROLLING COLUMN ADDRESS AND SEMICONDUCTOR MEMORY APPARATUS USING THE SAME
摘要 A column address control circuit and a semiconductor memory device using the same are provided to reduce the manufacturing cost using the test equipment of the low speed motion. A column address control circuit comprises a column address output part(100) and a controller(200). The column address output part outputs the address(Add) to the column address(Yadd) by corresponding to the write signal(WT) and the read signal(RD). The column address output part inverts the level of the column address corresponding to the control signal(crl1) and outputs the column address which is level-inverted. The controller produces the control signal by corresponding to the test signal(Test) and the counting enable signal(Icasp).
申请公布号 KR20090088119(A) 申请公布日期 2009.08.19
申请号 KR20080013477 申请日期 2008.02.14
申请人 HYNIX SEMICONDUCTOR INC. 发明人 PARK, NAK KYU
分类号 G11C8/18;G11C8/06;G11C29/00 主分类号 G11C8/18
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