METHOD OF MANUFACTURING GROUP III NITRIDE CRYSTAL

摘要

A manufacturing method of a III family nitride crystal is provided to restrict generation of a crack of the III family nitride crystal when a III family nitride substrate is removed efficiently. A manufacturing method of a III family nitride crystal includes the following steps of: growing a III family nitride crystal having different one between kind and rate of constitutional atoms and the kinds and concentration of dopant on a main surface of a III family nitride substrate(10); and removing the III family nitride substrate with vapor phase etching; and spinning etching gas on the other surface of the III family nitride substrate. The spinning etching uses one kind at least selected from a group consisting of HCI gas, Cl2 gas and H2 gas. The difference of the etching temperature of the spinning etching and the growth temperature of the III family nitride crystal is 200‹C or less.