| 摘要 |
A light emitting device wherein an upper and lower electrode type light emitting diode is used as a light source, a large current is permitted to flow to the light emitting diode, and dissipation of heat generated at the time of such current flow or shrinkage of a metal member due to thermal stress caused by such heat are taken into account. A method for manufacturing such light emitting device is also provided. The light emitting device is composed of at least a package having a plurality of package electrodes separated from each other; the upper and lower electrode type light emitting diode, which has a light emitting layer between a p-type semiconductor layer and an n-type semiconductor layer, an upper portion electrode on the uppermost layer and a lower electrode on the lowermost layer by bonding it on one of the package electrode; and a conductive connecting member for connecting the upper electrode of the light emitting diode with the other package electrode. Bonding between the one package electrode with the lower electrode, bonding between the upper electrode with the conductive connecting member and bonding between the conductive connecting member with the other package electrode are performed by using a solder. ® KIPO & WIPO 2009
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