| 摘要 |
A driving device 10 of an IGBT 1 comprises a high potential side switch device group having a plurality of switch devices M1 and M1', one of ends of each switch device being connected to a high potential side; a low potential side switch device group having a plurality of switch devices M2 and M2', one of ends of each switch device being connected to a low potential side; an drive type selective input terminal 10b to which a drive type selection signal corresponding to drive type of the IGBT 1 connected to the driving device 10 is inputted; a direct drive type control unit 23 and an indirect drive type control unit 24 generating a control signal controlling complementarily the high potential side switch device group and the low potential side switch device group corresponding to the drive type of the IGBT 1; and a selector 25 selecting the control signal controlling the high potential side switch device group and the low potential side switch device group corresponding to an inputted drive type selection signal. |
