| 摘要 |
The invention relates to a semiconductor element ( 10 ) with an integrated circuit ( 12 ), which has at least two layers ( 14, 16, 18 ), which are electrically conductive in areas, arranged one over the other, and spaced from one another by at least one intermediate layer ( 24, 26 ), whereby in a first layer ( 14 ), trace sections ( 28 ) for providing a first voltage potential and in a second layer ( 16 ), trace sections ( 30 ) for providing a second voltage potential are provided, and with at least one protection diode ( 36 ) electrically connected to a trace section ( 28 ) of the first layer ( 14 ) and to a trace section ( 30 ) of the second layer ( 16 ), said diode which is configured to eliminate voltage peaks in a substrate layer ( 38 ) arranged beneath the first and second layer ( 14, 16 ) and which is arranged at least in part beneath a trace section. It is provided according to the invention that the electrical connection of the protection diode ( 36 ) to the trace section ( 28 ) of the first layer ( 14 ) is realized as plated through hole ( 34 ), which penetrates the trace section ( 30 ) of the second layer ( 16 ). Use for integrated circuits. |
