METHOD FOR FORMING SEMICONDUCTOR DEVICE

摘要

A method for forming a semiconductor device is provided to improve etch selectivity of a first photoresist pattern and a second photoresist pattern by curing the first photoresist pattern by the electronic beam irradiation. A first photoresist pattern is formed on a hard mask layer(S100). The first photoresist pattern is exposed using the first mask pattern(S110). A first photoresist film is developed to form the first photoresist pattern(S120). The electronic beam is irradiated to the whole surface of the semiconductor substrate including the first photoresist pattern(S130). A second photoresist film is formed on the whole surface of the semiconductor substrate including the first hard mask pattern(S140). The second photoresist film is exposed(S150). The second photoresist film is developed to form the second photoresist pattern(S160).