A plasma etching apparatus is provided to increase an etching rate of an edge area of a substrate by controlling a distance between an upper electrode and the substrate. A chamber(100) has a reaction space. A substrate support unit(200) and a shield unit(300) are positioned in the reaction space. The substrate support unit and the shield unit expose the edge area of the substrate. The substrate support unit supports the central area of the substrate. The shield unit shields the central area of the substrate. A top electrode(400) and a bottom electrode(500) are positioned in the upper part and the lower part of the edge area of the substrate. The distance between the substrate and the top electrode is 2.5 to 6.5mm. The distance between the bottom electrode and the substrate is equal to or larger than the distance between the top electrode and the substrate. The distance between the shield unit and the substrate is smaller than the distance between the top electrode and the substrate.
