| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device by which a gate electrode having stable composition can be formed. SOLUTION: On the semiconductor substrate 11, a pMOS region 1 having a first multilayer film formed being corresponded to a gate length and constituted of a gate insulating film 21, a silicon material film 23a, a stopper film 25 and a silicon material film 23b in order, and an nMOS region 2 having a second multilayer film formed being corresponded to the gate length and constituted of a gate insulating film 21, a silicon material film 23a, and a silicon material film 23b in order, are formed apart from each other. On sidewalls of each of the first and second multilayer films, offset films 35 and sidewalls 37 are formed, and source-drain regions 15 are formed. The silicon material film 23b and stopper film 25 of the pMOS region 1 are removed, Ni is deposited on the silicon material film 23a and the silicon material film 23b in the nMOS region 2, and Ni<SB>3</SB>Si is formed in the pMOS region 1 and NiSi<SB>2</SB>is formed in the nMOS region 2. COPYRIGHT: (C)2009,JPO&INPIT
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