| 摘要 |
PROBLEM TO BE SOLVED: To improve quality of a semiconductor device by preventing abnormal oxidizing of NiSi, and further preventing the occurrence of particles. SOLUTION: It is known that, during a manufacturing process of a semiconductor device that uses NiSi, the oxygen in a standby chamber is entangled in a reactive furnace when inserting a boat when forming an SiN film by using a vertical depressurized vapor deposition device with the NiSi being present on a wafer surface layer, resulting in reaction with NiSi for oxidizing under the radiant heat of the heater and the temperature in the reactive furnace (300°C), which causes abnormal wiring resistance due to abnormal oxidation of NiSi. When the calorific value is reduced in order to eliminate the effect of radiant heat from the heater, the temperature in the furnace drops abruptly, resulting in peeling of the SiN film deposited in the furnace due to thermal stress, leading to occurrence of particles. To solve the problem, the board is inserted by controlling maximum calorific value of the heater that controls the temperature in the reactive furnace to 0.75 kJ/sec to 1.5 kJ/sec, during a process for forming the SiN film. COPYRIGHT: (C)2009,JPO&INPIT
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