| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a cerium oxide abrasive used for polishing a surface to be polished such as an SiO<SB>2</SB>insulation film. <P>SOLUTION: The cerium oxide abrasive containing slurry in which only cerium oxide particles are dispersed as abrasive grains in a medium is used to polish an Si wafer having an SiO<SB>2</SB>insulation film formed by a TEOS-CVD method. In the cerium oxide abrasive, the cerium oxide particles are dispersed as particles having the maximum particle size of ≤1,000 nm in the slurry, contained of the content 0.5-10 wt.% in the cerium oxide abrasive. The abrasive further contains a dispersing agent, wherein the dispersing agent is any one of acrylic acid copolymer and its ammonium salt. The cerium oxide abrasive is used to polish a semiconductor substrate having an SiO<SB>2</SB>insulation film formed thereon. <P>COPYRIGHT: (C)2009,JPO&INPIT |
