| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide technology capable of reducing the manufacturing cost of a semiconductor device that has a through electrode. <P>SOLUTION: After forming a ring-shaped groove part 14, passing through a semiconductor substrate 4 from the back side of the semiconductor substrate 4, and forming an insulating film 7 in the inside of the ring-shaped groove part 14 and the back of the semiconductor substrate 4, a through-hole 5 is formed on the insulating film 7, on the inside of the ring-shaped groove part 14 and the semiconductor substrate 4 from the back side of the semiconductor substrate 4, to make a surface-protecting insulating film 2 formed on the surface of the semiconductor substrate 4 to the bottom face of the through-hole 5 exposed. Subsequently, after forming an opening part 6, by removing a surface protecting insulating film 2 exposed to the bottom face of the through-hole 5 and exposing an element surface electrode 3, a contact electrode 9 connected to the element surface electrode 3 is formed on the inner walls of the through-hole 5 and the opening part 6, and a pad electrode 9a made of the same layer as the contact electrode 9 is formed on the back of the semiconductor substrate 4. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
