| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To solve the problem that in a phase change memory, electric property of a diode used as a selection element is extremely important, however since crystal grain boundaries are present in the film of a diode using polysilicon, variations in the off leak property becomes large making it difficult to prevent erroneous reading. <P>SOLUTION: There is provided a method of controlling the temperature profile of an amorphous silicon in the laser annealing for crystallizing and activating the amorphous silicon thereby controlling the crystal grain boundaries. Variation in the electric property of the diode can be decreased and the yield of the phase change memory can be improved. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
