发明名称 PHOTOELECTRIC CONVERTING ELEMENT AND SOLID-STATE IMAGE PICKUP ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a photoelectric converting element realizing sufficient dark current suppression effect and high photoelectric conversion efficiency and preventing drop of response speed and to provide a solid-state image pickup element. SOLUTION: The photoelectric converting element is provided with a pair of electrodes, a photoelectric converting layer arranged between a pair of the electrodes and a charge blocking layer which is formed between one electrode and the photoelectric converting layer and suppresses that charge is injected to the photoelectric converting layer from one of a pair of the electrodes when voltage is applied to a pair of the electrodes. The charge blocking layer comprises silicone oxide SiOx (0<x<2) and a material whose electron mobility is higher than silicone oxide. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009182096(A) 申请公布日期 2009.08.13
申请号 JP20080018881 申请日期 2008.01.30
申请人 FUJIFILM CORP 发明人 HAYASHI MASAYUKI
分类号 H01L31/10;H01L27/146 主分类号 H01L31/10
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