摘要 |
PROBLEM TO BE SOLVED: To provide a photoelectric converting element realizing sufficient dark current suppression effect and high photoelectric conversion efficiency and preventing drop of response speed and to provide a solid-state image pickup element. SOLUTION: The photoelectric converting element is provided with a pair of electrodes, a photoelectric converting layer arranged between a pair of the electrodes and a charge blocking layer which is formed between one electrode and the photoelectric converting layer and suppresses that charge is injected to the photoelectric converting layer from one of a pair of the electrodes when voltage is applied to a pair of the electrodes. The charge blocking layer comprises silicone oxide SiOx (0<x<2) and a material whose electron mobility is higher than silicone oxide. COPYRIGHT: (C)2009,JPO&INPIT
|