发明名称 DESIGN METHOD, DESIGN DEVICE AND PROGRAM, FOR SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a design method, a design device and a program for a semiconductor device, that can form a dummy pattern with suitable density. SOLUTION: The design method for dummy patterns formed to fill gaps in real patterns in the semiconductor device includes: a dummy pattern generation step of finding a remaining region obtained by removing a region obtained by expanding all the real patterns by a certain amount, from regions obtained by dividing the whole region of the semiconductor device to a fixed size, and generating the dummy patterns by reducing each of the divided regions by a certain amount in the remaining region; and a density verification step of repeating the dummy pattern generation step while changing the reduction amount for all or some of the divided regions of the dummy pattern generation step and/or the expansion amount of the real patterns when there is a dummy pattern which does not meet the density condition among the dummy patterns. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009182056(A) 申请公布日期 2009.08.13
申请号 JP20080018082 申请日期 2008.01.29
申请人 FUJITSU MICROELECTRONICS LTD 发明人 HARADA NORIHIRO;KOIZUMI RYOJI;YAMADA TOMOYUKI;TANEFUSA YUSUKE
分类号 H01L21/82;G06F17/50;H01L21/3205;H01L21/822;H01L23/52;H01L27/04 主分类号 H01L21/82
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