发明名称 |
DESIGN METHOD, DESIGN DEVICE AND PROGRAM, FOR SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a design method, a design device and a program for a semiconductor device, that can form a dummy pattern with suitable density. SOLUTION: The design method for dummy patterns formed to fill gaps in real patterns in the semiconductor device includes: a dummy pattern generation step of finding a remaining region obtained by removing a region obtained by expanding all the real patterns by a certain amount, from regions obtained by dividing the whole region of the semiconductor device to a fixed size, and generating the dummy patterns by reducing each of the divided regions by a certain amount in the remaining region; and a density verification step of repeating the dummy pattern generation step while changing the reduction amount for all or some of the divided regions of the dummy pattern generation step and/or the expansion amount of the real patterns when there is a dummy pattern which does not meet the density condition among the dummy patterns. COPYRIGHT: (C)2009,JPO&INPIT
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申请公布号 |
JP2009182056(A) |
申请公布日期 |
2009.08.13 |
申请号 |
JP20080018082 |
申请日期 |
2008.01.29 |
申请人 |
FUJITSU MICROELECTRONICS LTD |
发明人 |
HARADA NORIHIRO;KOIZUMI RYOJI;YAMADA TOMOYUKI;TANEFUSA YUSUKE |
分类号 |
H01L21/82;G06F17/50;H01L21/3205;H01L21/822;H01L23/52;H01L27/04 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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