| 摘要 |
<p>A vertical structure semiconductor chip comprises a metallization chip (300), a semiconductor epitaxy formed on the metallization chip (300), a passivation layer (307) covering the metallization chip (300) and the semiconductor epitaxy, and a patterned electrode (306). The metallization chip (300) comprises a first metal sheet (301), a second metal sheet (302), a first electrode (308), a second electrode (309) and conductive plugs (310,311). The first and second metal sheets (301,302) are electrically connected to the first and second electrodes (308,309) by the conductive plugs (310,311) respectively. The passivation layer (307) has windows(304,305) on the semiconductor epitaxy and the second metal sheet (302). The patterned electrode (306) is formed on the semiconductor epitaxy by the window (304), and extends to the window (305) of the second metal sheet (302).</p> |
