| 摘要 |
PROBLEM TO BE SOLVED: To provide a structure that is easy to manufacture when a microstructure refinement process is advanced. SOLUTION: In a semiconductor device having MOS transistors that have been continuously arranged in the direction of the plane of a substrate, a gate electrode and a wiring section that connects the gate electrodes (part shown by an arrow 13 in the figure) are embedded in a layer lower than the front surface of a substrate 10 where a diffusion layer 14 is formed. On the front surface of the substrate 10, a first element isolation region 12 of an STI structure is formed, which separates diffusion layers 14 that function as a source drain region. On a layer lower than the layer where the first element isolation region 12 exists, a second element isolation region 11 of an STI structure is formed, which separates adjoining MOS transistor channel regions. COPYRIGHT: (C)2009,JPO&INPIT |
