METHOD FOR PRODUCING p-SiC SEMICONDUCTOR SINGLE CRYSTAL AND p-SiC SEMICONDUCTOR SINGLE CRYSTAL PRODUCED THEREBY

摘要

PROBLEM TO BE SOLVED: To provide a method for producing a p-SiC semiconductor single crystal with a resistivity reduced to a practical level and to provide a p-SiC semiconductor single crystal produced thereby. SOLUTION: A method for producing a p-SiC semiconductor single crystal by a solution method which is a method for growing the p-SiC semiconductor single crystal on an SiC single crystal substrate from a solution formed by dissolving C in an Si melt, wherein a solution prepared further adding to the above solution Al and N in amounts satisfying the relationship: the amount of Al added>the amount of N added is used. A p-SiC semiconductor single crystal containing as impurities 1×1020cm-3Al and 2×1018to 7×1018cm-3N is also provided. COPYRIGHT: (C)2009,JPO&INPIT