发明名称 PLATED STRUCTURE
摘要 <p>Disclosed is a plated structure having extremely high conductivity. Specifically disclosed is a plated structure having a palladium plating layer formed on the surface of a metal base. In the palladium plating layer, the crystal orientation rate of the (111) plane as measured by X-ray diffraction is 45-60%, and the total of the crystal orientation rate of the (200) plane and the crystal orientation rate of the (220) plane is 40-55%.</p>
申请公布号 WO2009099067(A1) 申请公布日期 2009.08.13
申请号 WO2009JP51798 申请日期 2009.02.03
申请人 SEKISUI CHEMICAL CO., LTD.;KUBOTA, TAKASHI 发明人 KUBOTA, TAKASHI
分类号 C23C18/44;C25D3/50 主分类号 C23C18/44
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