发明名称 |
INSULATED GATE E-MODE TRANSISTORS |
摘要 |
Enhancement-mode III-nitride transistors are described that have a large source to drain barrier in the off state, low off state leakage, and low channel resistance in the access regions are described. The devices can include a charge depleting layer under the gate and/or a charge enhancing layer outside of the gate region, that is, in the access region.
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申请公布号 |
WO2009076076(A3) |
申请公布日期 |
2009.08.13 |
申请号 |
WO2008US85031 |
申请日期 |
2008.11.26 |
申请人 |
TRANSPHORM INC.;SUH, CHANG SOO;BEN-YAACOV, ILAN;COFFIE, ROBERT;MISHRA, UMESH |
发明人 |
SUH, CHANG SOO;BEN-YAACOV, ILAN;COFFIE, ROBERT;MISHRA, UMESH |
分类号 |
H01L29/78;H01L21/336;H01L29/00;H01L29/768 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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