| 摘要 |
PROBLEM TO BE SOLVED: To provide the analog/digital converter of a single electron transistor. SOLUTION: A conductive island of a gate-electrode junction unit with a pair of conductive layers jointed thereto is connected to a conductive island of a gate side of a single electron transistor part in the sandwiching form of a minimal insulating layer through a coupling capacitor; an electric charge is distributed to the coupling capacitor through the conductive island, by activating a tunneling operation in the minimal insulating layer of the gate-electrode junction unit in accordance with a variation in an input voltage; and the tunneling operation is activated in the single electron transistor part on the basis of the variation in the amount of charge (a) in the coupling capacitor. Resultantly, the analog/digital converter can be materialized in which a digital output can be obtained with a discrete level variation from an analog input voltage. COPYRIGHT: (C)2009,JPO&INPIT |
