发明名称 |
PROCESS FOR PRODUCING HIGH-PURITY SILICON AND APPARATUS |
摘要 |
When high purity silicon is produced through a gas-phase reaction between silicon tetra-chloride and zinc in a reaction furnace, the produce silicon is obtained as block or molten state. after the reaction in which the silicon is not in contact with air and reaction temperature is maintained at melting point of the silicon or less.
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申请公布号 |
US2009202415(A1) |
申请公布日期 |
2009.08.13 |
申请号 |
US20090417228 |
申请日期 |
2009.04.02 |
申请人 |
SHIMAMUNE TAKAYUKI;YOSHIKAWA TADASHI;FUKUOKA HIROSHI;ISHIZAWA NOBUO |
发明人 |
SHIMAMUNE TAKAYUKI;YOSHIKAWA TADASHI;FUKUOKA HIROSHI;ISHIZAWA NOBUO |
分类号 |
C01B33/033;B01J19/24;C01B33/035 |
主分类号 |
C01B33/033 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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