发明名称 |
PLASMA IMMERSION ION IMPLANTATION USING AN ELECTRODE WITH EDGE-EFFECT SUPPRESSION BY A DOWNWARDLY CURVING EDGE |
摘要 |
<p>In a plasma reactor, RF bias power is applied from an RF bias power generator to a disk-shaped electrode underlying and insulated from a workpiece and having a circumferential edge underlying a circumferential edge of the workpiece. The RF bias power is sufficient to produce a high RF bias voltage on the workpiece on the order of 0.5-20 kV. Non-uniformity in distribution of plasma across the workpiece is reduced by providing a curvature in a peripheral edge annulus of said electrode whereby the peripheral annulus slopes away from the workpiece support surface. The peripheral edge annulus corresponds to a small fraction of an area of said electrode. The remainder of the electrode encircled by the peripheral annulus has a flat shape.</p> |
申请公布号 |
WO2009099521(A1) |
申请公布日期 |
2009.08.13 |
申请号 |
WO2009US00371 |
申请日期 |
2009.01.19 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
PORSHNEV, PATER, I.;FOAD, MAJEED A. |
分类号 |
H01L21/265;H01J37/30 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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