发明名称 REDUCING DAMAGE TO LOW-K MATERIALS DURING PHOTORESIST STRIPPING
摘要 <p>A method of forming features in a porous low-k dielectric layer disposed below a patterned organic mask is provided. Features are etched into the porous low-k dielectric layer through the patterned organic mask, and then the patterned organic mask is stripped. The stripping of the patterned organic mask includes providing a stripping gas comprising COS, forming a plasma from the stripping gas, and stopping the stripping gas. A cap layer may be provided between the porous low-k dielectric layer and the patterned organic mask. The stripping of the patterned organic mask leaves the cap layer on the porous low-k dielectric layer.</p>
申请公布号 WO2009099812(A2) 申请公布日期 2009.08.13
申请号 WO2009US32162 申请日期 2009.01.27
申请人 LAM RESEARCH CORPORATION;KANG, SEAN S.;CHO, SANG JUN;CHOI, THOMAS S. 发明人 KANG, SEAN S.;CHO, SANG JUN;CHOI, THOMAS S.
分类号 H01L21/3065;H01L21/02 主分类号 H01L21/3065
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