MANUFACTURING METHOD OF INTEGRATED OPTICAL SEMICONDUCTOR DEVICE, AND THE INTEGRATED OPTICAL SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To embed first and second optical semiconductor devices with embedding layers of different structures in the state of matching the center axes of optical waveguide layers forming respective optical semiconductor devices in an integrated optical semiconductor device wherein the first and second optical semiconductor devices coexist. SOLUTION: A manufacturing method of the integrated optical semiconductor device includes: a process of forming a linear first mask over both first and second semiconductor lamination structures; a process of etching the first and second semiconductor lamination structures and forming first and second optical waveguide layers in a region protected by the first mask; a process of forming a second mask for covering the second optical waveguide layer in the state of making the first mask remain as it is; a process of growing a first embedding layer on both side faces of the exposed first optical waveguide layer; a process of removing the second mask while making the first mask remain as it is; and a process of forming a second embedding layer on both side faces of the exposed second optical waveguide layer. COPYRIGHT: (C)2009,JPO&INPIT