| 摘要 |
PROBLEM TO BE SOLVED: To stably obtain good properties of a thin-film transistor. SOLUTION: The thin-film transistor (135) includes: a first ohmic contact layer (139A); a second ohmic layer (139B) disposed a predetermined distance apart from the first ohmic layer (139A); a source electrode (138) at least part of which is formed on the first ohmic layer (139A); a drain electrode (137) at least part of which is formed on the second ohmic layer (139B); and a semiconductor layer (140) which is formed on the first ohmic layer (139A), the second ohmic layer (139B), the source electrode (138) and the drain electrode (137). COPYRIGHT: (C)2009,JPO&INPIT
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