METHOD OF FABRICATING TOP GATE ORGANIC SEMICONDUCTOR TRANSISTORS
摘要
<p>The present invention provides a method of fabricating a top-gate organic semiconductor transistor comprising: providing a substrate; depositing a source and drain electrode over the substrate; depositing an organic semiconductor material in a channel between the source and drain electrode and over at least a portion of the source and drain electrodes; depositing a dielectric material over the organic semiconductor material; depositing a gate electrode over the dielectric material and organic semiconductor material in the channel; removing a portion of the dielectric material and organic semiconductor material, wherein the gate electrode acts as a mask to shield the underlying organic semiconductor material and dielectric material during the step of removing.</p>
申请公布号
WO2009098477(A1)
申请公布日期
2009.08.13
申请号
WO2009GB00342
申请日期
2009.02.06
申请人
CAMBRIDGE DISPLAY TECHNOLOGY LIMITED;BURROUGHES, JEREMY;WHITING, GREGORY;HALLS, JONATHAN
发明人
BURROUGHES, JEREMY;WHITING, GREGORY;HALLS, JONATHAN