| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light-emitting device that can operate at a high drive voltage. <P>SOLUTION: The light-emitting device has a first GaN-based light-emitting diode element array formed on an insulating substrate, the light-emitting element being characterized in that: a first light-emitting diode element array includes columns of first light-emitting diode elements and columns of second light-emitting diode elements; each of the columns includes at least one light light-emitting diode element; the light-emitting diode elements in the first array are connected in series respectively between a first electrode pad and a second electrode pad; and the columns of the first light-emitting diode elements and the columns of the second light-emitting diode elements are each disposed in opposite directions. <P>COPYRIGHT: (C)2009,JPO&INPIT |
