发明名称 ORGANIC LIGHT EMITTING TRANSISTOR
摘要 <P>PROBLEM TO BE SOLVED: To simplify the structure of an organic light emitting transistor with a plurality of gates. <P>SOLUTION: The organic light emitting transistor includes: a substrate (1); a first gate electrode (2) disposed on the substrate; a second gate electrode (3) disposed on the substrate away from the first gate electrode; a gate insulating film (4) disposed on the substrate covering at least a part of the first gate electrode and the second gate electrode; a first source/drain electrode (5) disposed on the gate insulating film; a first organic semiconductor layer (6) superimposed on each of the first gate electrode and the second gate electrode and disposed on the gate insulating film covering at least a part of the first source/drain electrode; a second source/drain electrode disposed on the first organic semiconductor layer; and a second organic semiconductor layer (8) superimposed on each of the first gate electrode and the second gate electrode and disposed on the first organic semiconductor layer covering at least a part of the second source/drain electrode. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009182302(A) 申请公布日期 2009.08.13
申请号 JP20080022673 申请日期 2008.02.01
申请人 SEIKO EPSON CORP 发明人 KAMIKAWA TAKETOMI
分类号 H01L51/50;H01L21/28;H01L29/786;H01L33/00;H01L33/24;H01L33/26;H01L33/38;H01L33/44;H01L51/05 主分类号 H01L51/50
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