| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting element improving light-emitting efficiency and having low threshold current density. <P>SOLUTION: The nitride semiconductor light-emitting element includes an n-type GaN light guide layer 14, a light-emitting layer 15 and a p-type AlGaN carrier block layer 16, wherein the light-emitting layer 15 includes a barrier layer 30a, a well layer 31, a barrier layer 30b, a well layer 31, a barrier layer 30b, a well layer 31 and a barrier layer 30c which are laminated in this order. The light-emitting element has a configuration in which the well layer 31 is an InGaN layer in which an impurity is not doped, at least the barrier layer 30b sandwiched by the well layers 31 contains an InGaN layer 33b having an In composition ratio different from that of the well layer 31, and an GaN layer 32b, the InGaN layer 33b contacts the one well layer 31 and the GaN layer 32b contacts the other well layer. <P>COPYRIGHT: (C)2009,JPO&INPIT |
