| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an exposure apparatus that allows quick alignment of aberration measurement patterns used for measuring the aberration of a projection optical system. <P>SOLUTION: The exposure apparatus includes a third pattern for aligning with a first aberration measurement pattern arranged on a first mask 20, a fourth pattern for aligning with a second aberration measurement pattern arranged on a second mask 10, a detection system for detecting a relative position between the third pattern and the fourth pattern in order to align the first aberration measurement pattern with the second aberration measurement pattern, and a controller that controls at least either of an original stage 5 and a substrate stage 8 so as to align the first aberration measurement pattern, arranged at a position apart from the third pattern at a fixed distance, with the second aberration measurement pattern, arranged at a position apart from the fourth pattern at a fixed distance, on the basis of the relative position between the third pattern and the fourth pattern detected by the detection system. <P>COPYRIGHT: (C)2009,JPO&INPIT |
