发明名称 SEMICONDUCTOR LASER STRUCTURE
摘要 PROBLEM TO BE SOLVED: To provide a blue laser with reduced power output variations due to transient heating. SOLUTION: A III-V nitride blue laser diode in a short periodic table has an amplifier region 116 and a modulator region 118. The amplifier region 116 has a constant current to keep the region near a lasing threshold. The modulator region 118 has a small varying forward current or reverse bias voltage which controls the light output of the laser. Since this two-section blue laser diode requires much lower power consumption than directly modulated lasers, transient heating and "drooping" of the light output are reduced. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009182346(A) 申请公布日期 2009.08.13
申请号 JP20090119394 申请日期 2009.05.18
申请人 XEROX CORP 发明人 KNEISSL MICHAEL A;PAOLI THOMAS L
分类号 H01S5/026;H01S5/323;H01S5/343 主分类号 H01S5/026
代理机构 代理人
主权项
地址