| 摘要 |
A semiconductor laser device 100 having a ridge stripe structure comprises: an n-type clad layer 105 having a protrusion; and an n-type current block layer 107 covering the clad layer, except the upper surface of the protrusion. When the width of the upper surface is W, the distance between front and rear cleavage planes is L, the width of the upper surface at the front cleavage plane is Wf, and the width of the upper surface at the rear cleavage is Wr. In a range where a distance from the front cleavage plane is shorter than or equal to L/2, an area Sc of the upper surface is in a range of L/8x(3Wf+Wr)<Sc<=L/2xWf, and W in an arbitrary position in the range is in a range of ½(Wf+Wr)<W<=Wf.
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