发明名称 Unit cell of nonvolatile memory device and nonvolatile memory device having the same
摘要 A One-Time Programmable (OTP) unit cell and a nonvolatile memory device having the same are disclosed. A unit cell of a nonvolatile memory device includes: an anti-fuse connected between an output terminal and a ground voltage terminal; a first switching unit connected to the output terminal to transfer a write voltage to the output terminal; and a second switching unit connected to the output terminal to transfer a read voltage to the output terminal.
申请公布号 US2009201713(A1) 申请公布日期 2009.08.13
申请号 US20090320974 申请日期 2009.02.10
申请人 MAGNACHIP SEMICONDUCTOR, LTD. 发明人 SHIN CHANG-HEE;CHO KI-SEOK;JEON SEONG-DO
分类号 G11C17/16;G11C7/06;G11C17/00;G11C17/04 主分类号 G11C17/16
代理机构 代理人
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