发明名称 |
Unit cell of nonvolatile memory device and nonvolatile memory device having the same |
摘要 |
A One-Time Programmable (OTP) unit cell and a nonvolatile memory device having the same are disclosed. A unit cell of a nonvolatile memory device includes: an anti-fuse connected between an output terminal and a ground voltage terminal; a first switching unit connected to the output terminal to transfer a write voltage to the output terminal; and a second switching unit connected to the output terminal to transfer a read voltage to the output terminal.
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申请公布号 |
US2009201713(A1) |
申请公布日期 |
2009.08.13 |
申请号 |
US20090320974 |
申请日期 |
2009.02.10 |
申请人 |
MAGNACHIP SEMICONDUCTOR, LTD. |
发明人 |
SHIN CHANG-HEE;CHO KI-SEOK;JEON SEONG-DO |
分类号 |
G11C17/16;G11C7/06;G11C17/00;G11C17/04 |
主分类号 |
G11C17/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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