| 摘要 |
PROBLEM TO BE SOLVED: To provide an optical sensor element, capable of carrying out detection of a light reception quantity by using the nonvolatile change in the Vg-Id characteristics by reception of light in a newly-discovered semiconductor layer, in the so-called "MOS type element" that uses a semiconductor layer formed of an oxide semiconductor. SOLUTION: In this optical sensor element 1a, wherein a gate electrode 13 is stacked on a semiconductor layer 17 formed of an oxide semiconductor via a gate insulating film 15, and a source electrode 19s and a drain electrode 19d are connected to the semiconductor layer 17, the light reception quantity in the semiconductor layer 17 is read as a drain current value which has changed in a nonvolatile manner with respect to a gate voltage. The drain current value is read at the gate voltage which is not higher than the threshold voltage in the initial state, prior to the semiconductor layer 17 receiving light and is not higher than the voltage ar light reception. COPYRIGHT: (C)2009,JPO&INPIT |
