WASHING METHOD OF ANNEALED WAFER

摘要

PROBLEM TO BE SOLVED: To provide a washing method of an annealed wafer having no degradation of an oxide film breakdown voltage based on surface roughness even when a thin oxide film is formed on the annealed wafer by preventing the deterioration of the surface roughness due to washing after heat treatment of the annealed wafer. SOLUTION: In the washing method of the annealed wafer obtained by heat treating a silicon single crystal wafer, at least a natural oxide film formed after the heat treatment of the surface of the silicon single crystal wafer is removed and then RCA washing is performed. COPYRIGHT: (C)2009,JPO&INPIT