| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of improving current characteristics. SOLUTION: The semiconductor device includes an element region 13 provided with a channel region 16, and a unit gate structure 25 provided with a tunnel insulating film 21 formed on the element region 13, a charge storage insulating film 22 formed on the tunnel insulating film, a block insulating film 23 formed on the charge storage insulating film and a control gate electrode 24 formed on the block insulating film, for inducing a channel in the channel region. A distance between the element region and the control gate electrode is shorter at the center part of the unit gate structure than at both ends of the unit gate structure in the view from a direction parallel to a channel length direction. COPYRIGHT: (C)2009,JPO&INPIT
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